PART |
Description |
Maker |
STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
AP15P15GM-HF AP15P15GM-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.7 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
Advanced Power Electronics Corp. Advanced Power Electronics, Corp.
|
IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor ETC[ETC] List of Unclassifed Manufacturers
|
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V,夹断电.12AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc. ETC
|
STP7NB60FP STP7NB60 5325 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET -通道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics STMicroelectronics
|
APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
MGSF3455XT1 MGSF3455XT1_D ON1912 ON1911 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET P-CHANNEL ENHANCEMENT?ODE From old datasheet system
|
ON Semi MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
ZVP4525Z ZVP4525ZTA ZVP4525ZTC |
250 V, P-channel enhancement mode MOSFET 250V P-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
AP25P15GI14 AP25P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
|
Advanced Power Electronics Corp.
|